Methods of forming CoSi2, methods of forming field effect transistors, and methods of forming conductive contacts

ABSTRACT

The invention included to methods of forming CoSi 2 , methods of forming field effect transistors, and methods of forming conductive contacts. In one implementation, a method of forming CoSi 2  includes forming a substantially amorphous layer comprising MSi x  over a silicon-containing substrate, where “M” comprises at least some metal other than cobalt. A layer comprising cobalt is deposited over the substantially amorphous MSi x -comprising layer. The substrate is annealed effective to diffuse cobalt of the cobalt-comprising layer through the substantially amorphous MSi x -comprising layer and combine with silicon of the silicon-containing substrate to form CoSi 2  beneath the substantially amorphous MSi x -comprising layer. Other aspects and implementations are contemplated.

RELATED PATENT DATA

This patent resulted from a continuation application of U.S. patentapplication Ser. No. 11/195,174, filed Aug. 2, 2005, (now U.S. Pat. No.7,449,410), entitled “Methods of Forming CoSi2, Methods of Forming FieldEffect Transistors, and Methods of Forming Conductive Contacts”, namingYongjun Jeff Hu as inventor, the disclosure of which is incorporated byreference.

TECHNICAL FIELD

This invention relates to methods of forming CoSi₂, to methods offorming field effect transistors, and to methods of forming conductivecontacts.

BACKGROUND OF THE INVENTION

Metal silicides are conductive metal compounds commonly used in thefabrication of integrated circuitry. Exemplary uses are as conductiveinterfaces to silicon-containing node locations, and as conductivecontacts to and conductive strapping layers for field effect transistorgates.

One exemplary low resistance metal silicide is CoSi₂. Cobalt silicidealso occurs in the monosilicide form (CoSi), but it is the disilicideform which is of greater conductivity and that which is desired to beused in the fabrication of a conductive integrated circuit component.Cobalt silicide can be expressed as CoSi_(x), where “x” typically rangesfrom 0.3 to 2.

One manner of forming cobalt silicide includes deposition of a layer ofcobalt over a silicon-containing material, followed by subsequent hightemperature anneal causing interdiffusion of the silicon and cobalt,thereby forming cobalt silicide. Typically and preferably, the cobaltlayer is deposited directly on (with “on” in the context of thisdocument meaning in at least some direct physical contact therewith) thesilicon-containing material to facilitate diffusion of the cobalt and/orsilicon to form the silicide. Less preferred, a very thin native oxidemight be received intermediate the cobalt and silicon which dispersesduring the cobalt silicide formation typically still resulting inadequate cobalt silicide formation. Regardless, the typical annealing isconducted by rapid thermal processing (RTP).

The temperature at which the anneal occurs impacts the degree offormation of one or both of CoSi and/or CoSi₂. For example, an annealingtemperature of from 500° C. to 550° C. forms substantially all CoSi, anda temperature in excess of 800° C. forms substantially all CoSi₂.Intervening temperatures tend to form a mixture of CoSi and CoSi₂including other quantities of silicon with respect to cobalt. Further,such different temperatures are largely determinative of which species,cobalt or silicon, is the predominately moving species. For example atthe lower temperatures, cobalt diffusion/movement predominates such thatthe CoSi which forms tends to form mostly in the silicon region of thesubstrate, for example elevationally lower in the substrate where acobalt layer is formed elevationally over silicon. On the other hand atthe higher temperatures, silicon diffusion/movement predominates suchthat the CoSi₂ which is formed tends to form mostly in the region of thecobalt layer, for example elevationally higher in the substrate where acobalt layer is deposited over silicon. Further, where highertemperature anneals are conducted to predominately form CoSi₂, thesilicon migration can tend to form voids within the underlyingsilicon-containing substrate beneath where the CoSi₂ is formed.

In many instances, it would be desirable to form the CoSi₂ in the regionprior to the annealing which is predominately composed of siliconmovement and also in a manner which prevents void formation. One priorart manner of achieving this is to initially anneal at a lowertemperature which forms CoSi lower within the substrate where desired,while also typically leaving some of the cobalt layer unreacted. Thecobalt is then stripped by a wet etch, and the substrate subsequentlysubjected to a high temperature anneal which converts the CoSi to CoSi₂.This of course requires two separate annealing steps and stripping ofunreacted cobalt prior to conducting the second annealing step. Further,it is highly desirable that unreacted cobalt be stripped from thesubstrate prior to any subsequent exposure of the substrate totemperatures higher than 650° C. This is because cobalt tends to reactwith underlying oxide at temperatures greater than 650° C. and theresultant cobalt oxide which is formed can be difficult to remove.

While the invention was motivated in addressing the above identifiedissues, it is in no way so limited. The invention is only limited by theaccompanying claims as literally worded, without interpretative or otherlimiting reference to the specification, and in accordance with thedoctrine of equivalents.

SUMMARY

The invention included to methods of forming CoSi₂, methods of formingfield effect transistors, and methods of forming conductive contacts. Inone implementation, a method of forming CoSi₂ includes forming asubstantially amorphous layer comprising MSi over a silicon-containingsubstrate, where “M” comprises at least some metal other than cobalt,and preferably a refractory metal. A layer comprising cobalt isdeposited over the substantially amorphous MSi_(x)-comprising layer. Thesubstrate is annealed effective to diffuse cobalt of thecobalt-comprising layer through the substantially amorphousMSi_(x)-comprising layer and combine with silicon of thesilicon-containing substrate to form CoSi₂ beneath the substantiallyamorphous MSi_(x)-comprising layer.

In one implementation, a method of forming a field effect transistorcomprises forming a polysilicon-comprising gate proximate a channelregion of a semiconductor substrate. A gate dielectric is receivedbetween the gate and the channel region. The channel region is receivedbetween a pair of silicon-containing source/drain regions. Asubstantially amorphous layer comprising MSi_(x) is deposited over thepolysilicon and over the silicon-containing source/drain regions, where“M” comprises at least some metal, and preferably a refractory metal,other than cobalt. A layer comprising cobalt is deposited over thesubstantially amorphous MSi_(x)-comprising layer. The substrate isannealed effective to diffuse cobalt of the cobalt-comprising layerthrough the substantially amorphous MSi_(x)-comprising layer and combinewith polysilicon of the gate and with silicon of the source/drainregions effective to form a first region comprising CoSi₂ beneath thesubstantially amorphous MSi_(x)-comprising layer on thepolysilicon-comprising gate and to form respective second and thirdregions comprising CoSi₂ beneath the substantially amorphousMSi_(x)-comprising layer on the silicon-containing source/drain regions.The first, second, and third regions are spaced from one another.

In one implementation, a method of forming a conductive contactcomprises forming insulative material over a silicon-containing nodelocation of a semiconductor substrate. An opening is formed through theinsulative material to the silicon-containing node location. Asubstantially amorphous layer comprising MSi_(x) is deposited over theinsulative material to within the opening and over thesilicon-containing node location, where “M” comprises at least somemetal, and preferably a refractory metal, other than cobalt. A layercomprising cobalt is deposited over the substantially amorphousMSi_(x)-comprising layer. The substrate is annealed effective to diffusecobalt of the cobalt-comprising layer through the substantiallyamorphous MSi_(x)-comprising layer and combine with silicon of the nodelocation effective to form CoSi₂ beneath the substantially amorphousMSi_(x)-comprising layer at the node location.

Other aspects and implementations are contemplated.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a substrate fragment inprocess in accordance with an aspect of the invention.

FIG. 2 is a view the FIG. 1 substrate fragment at a processing stepsubsequent to that shown by FIG. 1.

FIG. 3 is a view the FIG. 2 substrate fragment at a processing stepsubsequent to that shown by FIG. 2.

FIG. 4 is a view the FIG. 3 substrate fragment at a processing stepsubsequent to that shown by FIG. 3.

FIG. 5 is a diagrammatic sectional view of a substrate fragment inprocess in accordance with an aspect of the invention.

FIG. 6 is a view the FIG. 5 substrate fragment at a processing stepsubsequent to that shown by FIG. 5.

FIG. 7 is a view the FIG. 6 substrate fragment at a processing stepsubsequent to that shown by FIG. 6.

FIG. 8 is a view the FIG. 7 substrate fragment at a processing stepsubsequent to that shown by FIG. 7.

FIG. 9 is a view the FIG. 8 substrate fragment at a processing stepsubsequent to that shown by FIG. 8.

FIG. 10 is a view the FIG. 9 substrate fragment at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a diagrammatic sectional view of a substrate fragment inprocess in accordance with an aspect of the invention.

FIG. 12 is a view the FIG. 11 substrate fragment at a processing stepsubsequent to that shown by FIG. 11.

FIG. 13 is a view the FIG. 12 substrate fragment at a processing stepsubsequent to that shown by FIG. 12.

FIG. 14 is a view the FIG. 13 substrate fragment at a processing stepsubsequent to that shown by FIG. 13.

FIG. 15 is a view the FIG. 14 substrate fragment at a processing stepsubsequent to that shown by FIG. 14.

FIG. 16 is a view the FIG. 15 substrate fragment at a processing stepsubsequent to that shown by FIG. 15.

FIG. 17 is a view of an alternate embodiment substrate processing inaccordance with aspects of the invention.

FIG. 18 is a view of an alternate embodiment substrate processing inaccordance with aspects of the invention.

FIG. 19 is a diagrammatic view of a computer illustrating an exemplaryapplication of the present invention.

FIG. 20 is a block diagram showing particular features of themotherboard of the FIG. 15 computer.

FIG. 21 is a high-level block diagram of an electronic system accordingto an exemplary aspect of the present invention.

FIG. 22 is a simplified block diagram of an exemplary electronic systemaccording to an aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

A method of forming CoSi₂ in accordance with aspects of the invention isinitially described with reference to FIGS. 1-4. FIG. 1 depicts asubstrate indicated generally with reference numeral 10. Substrate 10typically and preferably comprises a semiconductor substrate. In thecontext of this document, the term “semiconductor substrate” or“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). Substrate 10 is depicted as comprising a silicon-containingsubstrate 12, for example bulk monocrystalline silicon. Of course,silicon-on-insulator substrates are also contemplated as well as anyother substrate which is at least somewhere silicon-containing. Asubstantially amorphous layer 14 comprising MSi_(x) has been formed oversilicon-containing substrate 12, where “M” comprises at least some metalother than cobalt. “M” might comprise a mixture of metals other thancobalt, or might comprise a single metal other than cobalt, for exampleTa or other metal, with “M” most preferably comprising a refractorymetal. Further, substantially amorphous MSi_(x)-comprising layer 14might comprise/include some cobalt, or alternately and preferably mightbe void of detectable cobalt in the substrate of FIG. 1. Regardless, inone preferred implementation “x” of MSi_(x) ranges from 0.1 to 4.

In the context of this document, “substantially amorphous” does notpreclude some degree of crystallinity, yet requires that the layer whichis “substantially amorphous” be at least 65 percent by volume of anamorphous phase. Preferably, substantially amorphous MSi_(x)-comprisinglayer 14 is at least 70 volume percent amorphous, more preferably atleast 90 volume percent amorphous, and even more preferably at least 95percent amorphous. Further preferably, substantially amorphousMSi_(x)-comprising layer 14 is void of any crystalline grain boundariesextending completely through the thickness of layer 14. One reason forpreclusion of any such crystalline grain boundaries is to restrictsilicon diffusion as described below. FIG. 1 further depicts a preferredembodiment wherein substantially amorphous MSi_(x)-comprising layer 14is formed on silicon of silicon-containing substrate 12. An exemplarypreferred thickness range for layer 14 is from 5 Angstroms to 1,000Angstroms, more preferably from 15 Angstroms to 100 Angstroms, and evenmore preferably from 20 Angstroms to 40 Angstroms.

Referring to FIG. 2, a layer 16 comprising cobalt has been depositedover, and preferably on as shown, substantially amorphousMSi_(x)-comprising layer 14. An exemplary preferred thickness range forcobalt-comprising layer 16 is from 20 Angstroms to 1,000 Angstroms.Cobalt-comprising layer 16 preferably comprises elemental-form cobalt.However, alloy, metal compound, and other cobalt-including materials arecontemplated. Preferably if other than elemental-form cobalt, layer 16is predominately comprised of cobalt or excess of a stoichiometricamount of cobalt in a cobalt compound. To prevent top surface oxidationof material 16 (if desired), a thin Ti and/or TiN layer (i.e., 30Angstroms to 100 Angstroms) can be deposited atop material 16 (notshown).

Referring to FIG. 3, substrate fragment 10 has been annealed effectiveto diffuse cobalt of cobalt-comprising layer 16 through substantiallyamorphous MSi_(x)-comprising layer 14 and combine such cobalt withsilicon of silicon-containing substrate 12 to form CoSi₂ 20 beneathsubstantially amorphous MSi_(x)-comprising layer 14. Such might alsoform some CoSi₂ above or within layer 14, but at least some will alsoform beneath layer 14. Most preferably, such annealing is conducted at atemperature of no greater than 650° C. and at a temperature of no lessthan 450° C. One exemplary specific preferred annealing temperaturerange is from 500° C. to 600° C. Any suitable annealing is contemplated,with RTP being but one specific example, for example having atemperature ramp rate of at least 10° C. per second up to one or moredesired annealing temperatures. A specific preferred example includes arapid thermal processing temperature ramp at from 25° C. per second to75° C. per second to 550° C., and maintaining temperature at 550° C. forfrom 20 seconds to 30 seconds. The atmosphere during such annealing ispreferably inert, for example consisting essentially of N₂ and/or one ormore noble gases. Pressure can be atmospheric, subatmospheric, orgreater than atmospheric pressure. A reduction to practice pressure was10 Torr.

In one preferred example, the annealing forms no more than 5 atomicpercent CoSi, if any, of a total of all cobalt silicide formed by theannealing, and preferably no more than 1 atomic percent CoSi, if any.Further in one preferred embodiment, the CoSi₂ is in crystalline formand the silicon of the silicon-containing substrate from which such isformed is also in crystalline form. Typically and preferably in suchinstance, the CoSi₂ formed will be of the same crystalline structure asthe silicon of the silicon-containing substrate.

FIGS. 2 and 3 depict excess cobalt material 16 being fabricated suchthat all of layer 16 is not consumed in forming CoSi₂ 20 of FIG. 3. Theinvention also, of course, contemplates deposition of acobalt-comprising material 16 to a suitably thin thickness and/orconducting the annealing under conditions such that all ofcobalt-comprising layer 16 is consumed and converted to cobalt silicide.Regardless, any remaining of cobalt-comprising material 16 andMSi_(x)-comprising layer 14 might be desired to remain as part of theintegrated circuitry being fabricated, or alternately be removed.Accordingly in one aspect, the invention contemplates removing allremaining of any of cobalt-comprising layer 16 and/or all remaining ofany of MSi_(x)-comprising layer 14 from the substrate after theannealing. For example, FIG. 4 depicts all remaining of layers 16 and 14(not shown) having been removed from the substrate. For example,elemental cobalt can be stripped utilizing a wet mixture of HCl, H₂O₂and H₂O, while TaSi_(x) can be removed utilizing a mixture of H₂SO₄,H₂O₂, and H₂O, or with a dry chlorine based etch chemistry.

Aspects of the invention as described above in a method of forming CoSi₂might be utilized in fabrication of any such layer or materials to beformed as part of integrated circuitry, or even as a sacrificialmaterial not necessarily constituting part of integrated circuitry beingfabricated. Regardless, an exemplary method of forming a field effecttransistor comprising CoSi₂ fabricated in accordance with an aspect ofthe invention is next described with reference to FIGS. 5-10.

FIG. 5 depicts a substrate fragment 22 comprising a semiconductorsubstrate 24. Substrate 24 preferably has any of the above-describedattributes of substrate 12 of the first-described embodiment, withmonocrystalline silicon being but one preferred example. Substrate 24 isdepicted as comprising a pair of silicon-containing source/drain regions26 and 28 having a channel region 27 received there between. Suchregions may or may not be suitably doped at this point in the processbut nevertheless constitute regions within which a channel region (27)and source/drain regions (26, 28) will ultimately at least be partiallyreceived. A gate construction 30 is provided relative to semiconductorsubstrate 24. Such comprises a conductive polysilicon-comprising gate 32received operably proximate channel region 27, and has a gate dielectric34 received between gate 32 and channel region 27. The depictedexemplary embodiment is with respect to a conventional horizontal,planar oriented field effect transistor. However of course, theinvention contemplates fabrication relative to any field effecttransistor orientation, and whether existing or yet-to-be developed. Forexample and by way of example only, constructions are contemplated wherethe gate is received beneath or laterally of the channel region,including vertical and other oriented transistors. Gate construction 30in the depicted preferred embodiment is also shown as comprisinganisotropically etched insulative sidewall spacers 36 which have beenformed over sidewalls of polysilicon-comprising gate 32. Exemplarypreferred materials include one or a combination of silicon dioxide andsilicon nitride.

Referring to FIG. 6, a substantially amorphous layer 38 comprisingMSi_(x) has been deposited over polysilicon 32 and oversilicon-containing source/drain regions 26 and 28 (and preferably onpolysilicon 32 and on source/drain regions 26 and 28), where “M”comprises at least some metal other than cobalt. Attributes of layer 38are otherwise preferably as described above with respect tosubstantially amorphous MSi_(x)-comprising layer 14 of thefirst-described embodiment.

Referring to FIG. 7, a layer 40 comprising cobalt is deposited over (andpreferably on) substantially amorphous MSi_(x)-comprising layer 38.Preferred attributes of layer 40 are otherwise preferably as describedabove in connection with cobalt-comprising layer 16 of thefirst-described embodiment.

Referring to FIG. 8, substrate 22 has been annealed effective to diffusecobalt of cobalt-comprising layer 40 through substantially amorphousMSi_(x)-comprising layer 38 and combine such cobalt with polysilicon ofgate 32 effective to form a first region 42 comprising CoSi₂ beneathsubstantially amorphous MSi_(x)-comprising layer 38 onpolysilicon-comprising gate 32. Such annealing has also been effectiveto diffuse cobalt of cobalt-comprising layer 40 through substantiallyamorphous MSi_(x)-comprising layer 38 and combine such cobalt withsilicon of source/drain regions 26 and 28 to form respective second andthird regions 44 and 46 comprising CoSi₂ beneath substantially amorphousMSi_(x)-comprising layer 38 on silicon-containing source/drain regions26 and 28, and wherein first region 42, second region 44, and thirdregion 46 are spaced from one another. Preferred attributes of theannealing are preferably as described above in the fabrication of CoSi₂region 20 in the first-described embodiment.

As in the first-described embodiment, some or all of any remainingcobalt and MSi_(x) material might remain or be removed from thesubstrate. FIG. 9, by way of example only, depicts complete removal ofany remaining of cobalt-comprising material 40 (not shown) andMSi_(x)-comprising material 38 (not shown) from the substrate.Alternately and by way of example only, processing might be conductedwhereby not all remaining of the MSi_(x)-comprising material is removed,and perhaps at least or only that portion of MSi_(x)-comprising layerwhich is received between spaced first region 42, second region 44 andthird region 46 from substrate 22 after the annealing.

As referred to above, the invention contemplates ultimate fabrication ofoperable source/drain regions before or after any of the above-describedprocessing. Accordingly in one implementation, and by way of exampleonly, the invention contemplates implanting a highest concentrationdoped portion of the source/drain regions prior to the annealing, and inanother exemplary implementation after the annealing. For example, FIG.10 depicts formation of highest concentration doped portions 48 of therespective source/drain regions occurring by implanting of the FIG. 9substrate. The implant species could, of course, be of “p” and/or “n”type as known by people of skill in the art. Further, LDD, halo, etc.implants might also be additionally be provided at any point in thefabrication of a field effect transistor.

By way of example only, aspects of the invention also encompass orcontemplate methods of forming conductive contacts, for example asdescribed below in connection with embodiments as shown in FIGS. 11-17.FIG. 11 depicts a substrate fragment 50 comprising a silicon-containingsubstrate 52 having some insulative material 54 formed thereover.Exemplary preferred attributes for substrate 52 are those as describedabove in connection with substrate/material 12 of the first-describedembodiment. Insulative material 54 might comprise one or more differentinsulative materials, with one or a combination of silicon dioxide(whether doped or undoped) and silicon nitride being but two examples.An exemplary preferred thickness for material 54 is from 400 Angstromsto 30,000 Angstroms. FIG. 11 can be considered as constituting somesilicon-containing node location 56 over (preferably on as shown) whichmaterial 54 has been formed.

Referring to FIG. 12, an opening 58 has been formed through insulativematerial 54 to silicon-containing node location 56. By way of exampleonly, an exemplary process comprises photolithographic patterning andetch. By way of example only, an exemplary minimum width for opening 58is from 50 Angstroms to 900×10⁴ Angstroms.

Referring to FIG. 13, a substantially amorphous layer 60 comprisingMSi_(x) has been deposited over insulative material 54 to within opening58 and over (preferably on) silicon-containing node location 56, where“M” comprises at least some metal other than cobalt. Preferredattributes for substantially amorphous MSi_(x)-comprising layer 60 areotherwise as described above in connection with substantially amorphousMSi_(x)-comprising layer 14 of the first-described embodiment.

Referring to FIG. 14, a layer 62 comprising cobalt has been depositedover (preferably on) substantially amorphous MSi_(x)-comprising layer 60within opening 58 as shown. Cobalt-comprising layer 62 might partiallyor completely fill remaining portions of opening 58, with less thancomplete filling being depicted in FIG. 14. Preferred attributes forcobalt-comprising layer 62 are preferably otherwise as described abovewith respect to cobalt-comprising layer 16 in the first-describedembodiment.

Referring to FIG. 15, substrate 50 has been annealed effective todiffuse cobalt of cobalt-comprising layer 62 through substantiallyamorphous MSi_(x)-comprising layer 60 and combine such cobalt withsilicon of node location 56 effective to form CoSi₂ 64 beneathsubstantially amorphous MSi_(x)-comprising layer 60 at node location 56.Processing with respect to the annealing is preferably as describedabove in connection with fabrication of CoSi₂-comprising region 20 inthe first-described embodiment.

FIG. 16 depicts exemplary subsequent processing whereby a conductivecontact 65 within opening 58 has been fabricated to node location 56. Anexemplary manner of forming the same is by deposition of anotherconductive material 66 (i.e., any of one or more elemental metals, oneor more alloys, one or more conductive compounds, and/or one or moreconductively doped semiconductive materials) followed by a subsequentpolishing (i.e., chemical mechanical polishing) or other removal ofmaterials 60, 62 and 66 which were received elevationally outward ofinsulative material 54. Alternately of course, and by way of examplesonly, damascene-like processing is contemplated, or an exemplarysubtractive patterning and etch of materials 60, 62 and 66 such that aconductive line is fabricated as part of the conductive contactelevationally outward of insulative material 54.

The invention also, of course, contemplates removal of some or all ofmaterials 60 and 62 after the annealing, for example as depicted in FIG.17 in connection with a substrate fragment 50 a. Like numerals from theFIGS. 11-16 embodiment have been utilized where appropriate, withdifferences being indicated with the suffix “a”. FIG. 17 depictsmaterials 60 and 62 (not shown) as having been removed, and conductivematerial(s) 66 a formed within contact opening 58. An exemplaryconductive material 66 a includes a tungsten plug lined with TiN.

In fabricating an integrated circuit, such might comprise any circuit,or sub-circuit. Further by way of example only, such might comprisememory circuitry, for example DRAM circuitry. For example, FIG. 18depicts the field effect transistor of FIG. 10 incorporated into a DRAMmemory cell. Specifically, CoSi₂ region 44 is electrically connected toa storage device 150, and CoSi₂ region 46 is electrically connected to abitline 152. Storage device 150 can comprise any suitable device,including a capacitor, for example. Bitline 152 can comprise anysuitable construction. The field effect transistor can be considered tobe part of an integrated circuit, for example the DRAM integratedcircuitry just described.

FIG. 19 illustrates generally, by way of example, but not by way oflimitation, an embodiment of a computer system 400 according to anaspect of the present invention. Computer system 400 includes a monitor401 or other communication output device, a keyboard 402 or othercommunication input device, and a motherboard 404. Motherboard 404 cancarry a microprocessor 406 or other data processing unit, and at leastone memory device 408. Memory device 408 can comprise various aspects ofthe invention described above, including, for example, one or more ofthe wordlines, bitlines and DRAM unit cells. Memory device 408 cancomprise an array of memory cells, and such array can be coupled withaddressing circuitry for accessing individual memory cells in the array.Further, the memory cell array can be coupled to a read circuit forreading data from the memory cells. The addressing and read circuitrycan be utilized for conveying information between memory device 408 andprocessor 406. Such is illustrated in the block diagram of themotherboard 404 shown in FIG. 20. In such block diagram, the addressingcircuitry is illustrated as 410 and the read circuitry is illustrated as412.

In particular aspects of the invention, memory device 408 can correspondto a memory module. For example, single in-line memory modules (SIMMs)and dual in-line memory modules (DIMMs) may be used in theimplementation which utilizes the teachings of the present invention.The memory device can be incorporated into any of a variety of designswhich provide different methods of reading from and writing to memorycells of the device. One such method is the page mode operation. Pagemode operations in a DRAM are defined by the method of accessing a rowof a memory cell arrays and randomly accessing different columns of thearray. Data stored at the row and column intersection can be read andoutput while that column is accessed.

An alternate type of device is the extended data output (EDO) memorywhich allows data stored at a memory array address to be available asoutput after the addressed column has been closed. This memory canincrease some communication speeds by allowing shorter access signalswithout reducing the time in which memory output data is available on amemory bus. Other alternative types of devices, by way of example only,include SDRAM, DDR SDRAM, SLDRAM, VRAM and Direct RDRAM, as well asothers such as SRAM or Flash memories.

FIG. 21 illustrates a simplified block diagram of a high-levelorganization of various embodiments of an exemplary electronic system700 of the present invention. System 700 can correspond to, for example,a computer system, a process control system, or any other system thatemploys a processor and associated memory. Electronic system 700 hasfunctional elements, including a processor or arithmetic/logic unit(ALU) 702, a control unit 704, a memory device unit 706 and aninput/output (I/O) device 708. Generally, electronic system 700 willhave a native set of instructions that specify operations to beperformed on data by processor 702 and other interactions betweenprocessor 702, memory device unit 706 and I/O devices 708. Control unit704 coordinates all operations of processor 702, memory device 706 andI/O devices 708 by continuously cycling through a set of operations thatcause instructions to be fetched from memory device 706 and executed. Invarious embodiments, memory device 706 includes, but is not limited to,random access memory (RAM) devices, read-only memory (ROM) devices, andperipheral devices such as a floppy disk drive and a compact disk CD-ROMdrive. One of ordinary skill in the art will understand, upon readingand comprehending this disclosure, that any of the illustratedelectrical components are capable of being fabricated to include DRAMcells, wordlines and bitlines in accordance with various aspects of thepresent invention.

FIG. 22 is a simplified block diagram of a high-level organization ofvarious embodiments of an exemplary electronic system 800. The system800 includes a memory device 802 that has an array of memory cells 804,address decoder 806, row access circuitry 808, column access circuitry810, read/write control circuitry 812 for controlling operations, andinput/output circuitry 814. Memory device 802 further includes powercircuitry 816, and sensors 820, such as current sensors for determiningwhether a memory cell is in a low-threshold conducting state or in ahigh-threshold non-conducting state. The illustrated power circuitry 816includes power supply circuitry 880, circuitry 882 for providing areference voltage, circuitry 884 for providing the first wordline withpulses, circuitry 886 for providing the second wordline with pulses, andcircuitry 888 for providing the bitline with pulses. System 800 alsoincludes a processor 822, or memory controller for memory accessing.

Memory device 802 receives control signals 824 from processor 822 overwiring or metallization lines. Memory device 802 is used to store datawhich is accessed via I/O lines. It will be appreciated by those skilledin the art that additional circuitry and control signals can beprovided, and that memory device 802 has been simplified to help focuson the invention. At least one of processor 822 or memory device 802 caninclude a DRAM cell of the type described previously in this disclosure.

The various illustrated systems of this disclosure are intended toprovide a general understanding of various applications for thecircuitry and structures of the present invention, and are not intendedto serve as a complete description of all the elements and features ofan electronic system using memory cells in accordance with aspects ofthe present invention. One of ordinary skill in the art will understandthat the various electronic systems can be fabricated in single-packageprocessing units, or even on a single semiconductor chip, in order toreduce the communication time between the processor and the memorydevice(s).

Applications for memory cells, wordlines and bitlines can includeelectronic systems for use in memory modules, device drivers, powermodules, communication modems, processor modules, andapplication-specific modules, and may include multilayer, multichipmodules. Such circuitry can further be a subcomponent of a variety ofelectronic systems, such as a clock, a television, a cell phone, apersonal computer, an automobile, an industrial control system, anaircraft, and others.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming CoSi₂, comprising: forming a substantiallyamorphous layer comprising MSi_(x) over a silicon-containing substrate,where “M” comprises at least some metal other than cobalt, and where “x”is from 0.1 to 4; depositing a layer comprising cobalt over thesubstantially amorphous MSi_(x)-comprising layer; and annealing thesubstrate effective to diffuse cobalt of the cobalt-comprising layerthrough the substantially amorphous MSi_(x)-comprising layer and combinewith silicon of the silicon-containing substrate to form CoSi₂ beneathand within the substantially amorphous MSi_(x)-comprising layer.
 2. Themethod of claim 1 wherein the substantially amorphous MSi_(x)-comprisinglayer is formed on silicon of the silicon-containing substrate.
 3. Themethod of claim 1 wherein the substantially amorphous MSi_(x)-comprisinglayer has a thickness of from 5 Angstroms to 1000 Angstroms.
 4. Themethod of claim 3 wherein the substantially amorphous MSi_(x)-comprisinglayer has a thickness of from 15 Angstroms to 100 Angstroms.
 5. Themethod of claim 4 wherein the substantially amorphous MSi_(x)-comprisinglayer has a thickness of from 20 Angstroms to 40 Angstroms.
 6. Themethod of claim 1 wherein “M” comprises a refractory metal other thancobalt prior to the depositing.
 7. The method of claim 6 wherein “M”comprises a mixture of refractory metals other than cobalt prior to thedepositing.
 8. The method of claim 1 wherein the substantially amorphousMSi_(x)-comprising layer comprises cobalt prior to the depositing. 9.The method of claim 1 wherein the substantially amorphousMSi_(x)-comprising layer is void of detectable cobalt prior to thedepositing.
 10. The method of claim 1 wherein “M” comprises Ta.
 11. Themethod of claim 1 wherein the substantially amorphous MSi_(x)-comprisinglayer is at least 70% amorphous.
 12. The method of claim 1 wherein thesubstantially amorphous MSi_(x)-comprising layer is at least 90%amorphous.
 13. The method of claim 1 wherein the substantially amorphousMSi_(x)-comprising layer is at least 95% amorphous.
 14. The method ofclaim 1 wherein the substantially amorphous MSi_(x)-comprising layer isvoid of any crystalline grain boundaries extending completely throughits thickness.
 15. The method of claim 1 wherein the cobalt-comprisinglayer is deposited on the substantially amorphous MSi_(x)-comprisinglayer.
 16. The method of claim 1 wherein the substantially amorphousMSi_(x)-comprising layer is formed on silicon of the silicon-containingsubstrate, and the cobalt-comprising layer is deposited on thesubstantially amorphous MSi_(x)-comprising layer.
 17. The method ofclaim 16 wherein the substantially amorphous MSi_(x)-comprising layerhas a thickness of from 15 Angstroms to 100 Angstroms.
 18. The method ofclaim 1 wherein the cobalt-comprising layer comprises elemental-formcobalt.
 19. The method of claim 1 comprising removing all remaining ofthe MSi_(x)-comprising layer from the substrate after the annealing. 20.The method of claim 1 wherein the annealing is conducted at atemperature of no greater than 650° C.
 21. The method of claim 20wherein the annealing is conducted at a temperature of no less than 450°C.
 22. The method of claim 1 wherein the annealing is conducted at atemperature of from 500° C. to 600° C.
 23. The method of claim 1 whereinthe annealing comprises rapid thermal processing.
 24. The method ofclaim 1 wherein the annealing forms no more than five atomic percentCoSi, if any, of a total of all cobalt silicide formed by saidannealing.
 25. The method of claim 24 wherein the annealing forms nomore than one atomic percent CoSi, if any, of a total of all cobaltsilicide formed by said annealing.
 26. The method of claim 1 wherein theCoSi₂ is crystalline and the silicon of the silicon-containing substrateis crystalline, the CoSi₂ being of the same crystalline structure as thesilicon of the silicon-containing substrate.
 27. The method of claim 1wherein the annealing forms CoSi₂ above the substantially amorphousMSi_(x)-comprising layer.